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| (R) BYW98-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 3A 200 V 150 C 0.85 V 35 ns FEATURES AND BENEFITS s s s Very low conduction losses Negligible switching losses Low forward and reverse recovery times DO-201AD BYW98-200 DESCRIPTION Low voltage drop and rectifier suited for switching mode base drive and transistor circuits. ABSOLUTE RATINGS (limiting values) Symbol VRRM IFRM IF (AV) IFSM Tstg Tj TL Parameter Repetitive peak reverse voltage Repetitive peak forward current* Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Maximum lead temperature for soldering during 10s at 4mm from case tp = 5s Ta = 75C tp = 10ms F = 1KHz = 0.5 Sinusoidal Value 200 110 3 70 - 65 to + 150 150 230 Unit V A A A C C C * On infinite heatsink with 10mm lead length. October 2001 - Ed: 4C 1/5 BYW98-200 THERMAL PARAMETERS Symbol Rth (j-a) Junction-ambient* Parameter Value 25 Unit C/W * On infinite heatsink with 10mm lead length. STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Test Conditions Tj = 25C Tj = 100C VF ** Forward voltage drop Tj = 25C Tj = 100C Pulse test : * tp = 5 ms, < 2 % ** tp = 380 s, < 2 % Min. Typ. Max. 10 0.5 Unit A mA V VR = VRRM IF = 9A IF = 3A 0.78 1.2 0.85 To evaluate the maximum conduction losses use the following equations: P = 0.75 x IF(AV) + 0.04 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Qrr tfr VFP Test conditions IF = 1A dIF/dt = - 50A/s VR = 30V IF = 3A dIF/dt = - 20A/s VR 30V IF = 3A dIF/dt = - 50A/s Measured at 1.1 x VF max IF = 3A dIF/dt = - 50A/s Tj = 25C Tj = 25C Tj = 25C Tj = 25C 15 20 5 Min. Typ. Max. 35 Unit ns nC ns V 2/5 BYW98-200 Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 IF(av) (A) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 =tp/T T = 0.05 = 0.1 = 0.2 = 0.5 =1 Fig. 2: Average forward current versus ambient temperature (=0.5). IF(av)(A) 3.5 Rth(j-a)=Rth(j-l) 3.0 2.5 2.0 Rth(j-a)=75C/W 1.5 1.0 tp T 0.5 3.5 =tp/T tp Tamb(C) 50 75 100 125 150 3.0 0.0 0 25 Fig. 3: Thermal resistance versus lead length. Fig. 4: Variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, epoxy FR4, e(Cu) = 35m). Zth(j-a)/Rth(j-a) 1.00 Rth(C/W) 90 80 70 60 50 40 30 20 Rth(j-l) Rth(j-a) = 0.5 = 0.2 0.10 = 0.1 T Single pulse 10 0 5 10 Lleads(mm) 15 20 25 0.01 1E-1 1E+0 tp(s) 1E+1 =tp/T tp 1E+2 5E+2 Fig. 5: Forward voltage drop versus forward current (maximum values). IFM(A) Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 70.00 Tj=100C (Typical values) F=1MHz Tj=25C 10.00 Tj=25C 50 Tj=100C 1.00 20 VR(V) 10 1 10 100 200 VFM(V) 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 3/5 BYW98-200 Fig. 7: Reverse recovery time versus dIF/dt. Fig. 8: Peak reverse recovery current versus dIF/dt. IRM(A) IF=3A 90% confidence Tj=100C trr(ns) 100 80 60 40 20 dIF/dt(A/s) 0 1 10 100 Tj=25C IF=3A 90% confidence Tj=100C Tj=100C 2.5 2.0 1.5 1.0 Tj=100C Tj=25C 0.5 0.0 dIF/dt(A/s) 1 10 100 Fig. 9: Dynamic parameters versus junction temperature. % 250 IF=3A dIF/dt=50A/s VR=30V Qrr 200 IRM 150 trr 100 25 Tj(C) 50 75 100 125 150 4/5 BYW98-200 PACKAGE MECHANICAL DATA DO-201AD B A B OC note 1 E E note 1 OD OD note 2 DIMENSIONS REF. A B C D E 25.40 5.30 1.30 1.25 Millimeters Min. Max. 9.50 Inches Min. 1.000 0.209 0.051 0.049 NOTES 1 - The lead diameter D is not controlled over zone E 2 - The minimum axial length within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) Max. 0.374 Ordering code BYW98-200 BYW98-200RL s Marking BYW98-200 BYW98-200 Package DO-201AD DO-201AD Weight 1.16 g 1.16 g Base qty 600 1900 Delivery mode Ammopack Tape and reel s White band indicates cathode Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia -Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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